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Glossary

Common abbreviations in NEST

iaf: integrate and fire
gif: generalized integrate and fire
cond: conductance-based
psc: postsynaptic current (current-based)
hh: hodgkin huxley
rng: random number generator
wfr: waveform relaxation method
aeif: adaptive exponential integrate and fire
ht: hill and tononi
pp: point process
in: inhibitory
ex: excitatory
MAM: multi-area model
mpi: message passing interface
stdp: spike-timing dependent plasticity synapse
st: short term plasticity
vp: virtual process

Physical units and variable names used for NEST parameters

Note

all parameters listed here are defined as type double in NEST

time

milliseconds ms

tau_m

Membrane time constant in ms

t_ref

Duration of refractory period in ms

t_spike

point in time of last spike in

capacitance

picofarads pF

C_m

Capacitance of the membrane in pF

current

picoamperes pA

I_e

Constant input current in pA.

conductance

nanosiemens nS

_L Leak conductance in nS

_K Potassium peak conductance in nS.

_Na Sodium peak conductance in nS.

spike rates

spikes/s

modulation frequencies

herz Hz

frequency

frequncy in Hz

voltage

millivolts mV

V_m

Membrane potential in mV

E_L

Resting membrane potential in mV.

V_th

Spike threshold in mV.

V_reset double

Reset potential of the membrane in mV.

V_min

Absolute lower value for the membrane potential in mV

E_ex

Excitatory reversal potential in mV.

E_in

Inhibitory reversal potential in mV.

E_Na

Sodium reversal potential in mV.

E_K

Potassium reversal potential in mV.